| PART |
Description |
Maker |
| IDT72V85L15PAG IDT72V85L15PAGI |
3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO
|
Integrated Device Technology, Inc.
|
| IDT72V04L15J IDT72V05 IDT72V06 IDT72V06L35JI IDT72 |
From old datasheet system
3.3 VOLT CMOS ASYNCHRONOUS FIFO
|
IDT[Integrated Device Technology]
|
| IDT7207L30SOG IDT7207L25SOG IDT7207L40SOG IDT7207L |
CMOS ASYNCHRONOUS FIFO 16K X 9 OTHER FIFO, 50 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 32K X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 异步FIFO的CMOS
CMOS ASYNCHRONOUS FIFO 2K X 9 OTHER FIFO, 15 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 16K X 9 OTHER FIFO, 25 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 64K X 9 OTHER FIFO, 25 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 64K X 9 OTHER FIFO, 25 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 64K X 9 OTHER FIFO, 20 ns, PDIP28
|
Integrated Device Technology, Inc.
|
| IDT7280 IDT7280L IDT7280L12 IDT7280L12PA IDT7280L1 |
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9DUAL 1024 x 9 DUAL 2048 x 9DUAL 4096 x 9 DUAL 8192 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9 DUAL 1024 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024 x 9
|
IDT[Integrated Device Technology]
|
| LH540202-20 LH540202-15 LH540201U-35 LH540201U-25 |
x9 Asynchronous FIFO
From old datasheet system
FIFO,1KX9,ASYNCHRONOUS,CMOS,DIP,28PIN,PLASTIC
|
Sharp Corp
|
| IDT7208L20J IDT7208L35P IDT7208L20P IDT7208 IDT720 |
CMOS ASYNCHRONOUS FIFO 65,536 x 9
CMOS ASYNCHRONOUS FIFO 65536 x 9
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| S29CD032G S29CD032G0JFAI000 S29CD032G0JFAI002 S29C |
CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
From old datasheet system
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
SPANSION[SPANSION]
|
| IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V
3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 11C 11#16 SKT RECP BOX RM
3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9
3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9
GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32
GT 7C 7#16S PIN RECP
3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 8C 8#16 SKT RECP WALL
GT 3C 3#16S PIN RECP WALL
GT 4C 4#12 PIN PLUG
3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby
THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta
DB25SC37
DSUB
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| 74LVC2373A 74LVC2373AD 74LVC2373ADB 74LVC2373APW 7 |
14-Bit Asynchronous Binary Counters 16-SO -40 to 85
Octal D-type transparent latch with 5-volt tolerant inputs/outputs; damping resistor 3-State
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| AM29F016B-70EEB AM29F016B-70EIB AM29F016B-120DGI1 |
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory-Die Revision 1
16 megabit CMOS 5.0 volt-only uniform flash memory
|
Advanced Micro Devices
|
|
